• Part: 2SK1860
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Panasonic
  • Size: 77.30 KB
Download 2SK1860 Datasheet PDF
Panasonic
2SK1860
Features - High mutual conductance gm - Low noise voltage of NV +0.10 0.40 - 0.05 - 0.01 +0.02 1.5±0.2 2.1±0.1 5.8±0.2 - Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gate open) Drain-gate current (Souse open) Gate-source cutoff current (Drain open) Power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 200 - 20 to +80 - 55 to +150 Unit 10˚ (0.95) (0.95) 2.20±0.15 5˚ (0.5) 1.9±0.1 2.9±0.2 V V m A m A m A m W °C °C 0.7±0.1 1: Drain 2: Source 3: Gate Minit3-F1 Package Marking Symbol: 1H - Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain current Drain-sourse cutoff current (G-S short) Mutual conductance Noise voltage Voltage gain Symbol ID IDSS gm NV Gv1 Gv2 Gv3 ∆Gv - f- Voltage gain difference ∆Gv2 - Gv1 ∆Gv1 - Gv3 Conditions VDS = 4.5 V, CO = 10 p F RD = 2.2 kΩ ± 1% VDS = 4.5 V, VGS = 0 VD...